Platinum-adsorbed defective 2D monolayer boron nitride: a promising electrocatalyst for O2 reduction reaction

文献信息

发布日期 2023-09-30
DOI 10.1039/D3TC02399K
影响因子 7.393
作者

Lokesh Yadav



摘要

Hexagonal boron nitride (hBN) has long been thought to be chemically inert due to its wide bandgap and strong covalent bonds. Due to its inertness with saturated robust covalent bonds, the pristine 2D monolayer hBN cannot be functionalized for application in energy conversion. Therefore, it is necessary to make the 2D hBN chemically reactive for potential applications. Here, we have computationally designed a 2D monolayer hBN with a single nitrogen (N) and boron (B) di-vacancy, denoted by VBN defective-BN (d-BN), to activate the chemical reactivity, which is an effective strategy to use d-BN for potential applications especially in electrochemistry. A single Pt atom adsorbed on the defective area of VBN d-BN acts as a single-atom catalyst (SAC) which exhibits distinctive performances for O2 reduction reaction (ORR). The first-principles based dispersion-corrected periodic hybrid density functional theory (DFT-D) method has been employed to investigate the equilibrium structure and properties of the Pt-adsorbed 2D monolayer defective boron nitride (Pt-d-BN). The present study shows the semiconducting character of Pt-d-BN with an electronic bandgap of 1.30 eV, which is an essential aspect of the ORR. The ORR mechanism on the surface of 2D monolayer Pt-d-BN follows a 4e− reduction route because of the low barriers to OOH formation and dissociation, H2O2 instability, and water production on the Pt-d-BN surface. Here, both dissociative and associative ORR mechanisms have been investigated, and it is found that the associative mechanism with the ORR pathway is more thermodynamically favorable. Therefore, it can be mentioned here that the 2D monolayer Pt-d-BN exhibits high selectivity for the four-electron reduction pathway. According to the calculations of the relative adsorption energy of each step in ORR, Pt-d-BN is anticipated to exhibit substantial catalytic activity. These findings are significant because they provide an additional understanding of the ORR process on the metal atom-adsorbed d-BN and a new method for producing inexpensive materials with strong electrocatalytic activity for various applications of fuel cells.

来源期刊

Journal of Materials Chemistry C

Journal of Materials Chemistry C
CiteScore: 10.8
自引率: 7%
年发文量: 1601

Journal of Materials Chemistry A, B & C cover high quality studies across all fields of materials chemistry. The journals focus on those theoretical or experimental studies that report new understanding, applications, properties and synthesis of materials. The journals have a strong history of publishing quality reports of interest to interdisciplinary communities and providing an efficient and rigorous service through peer review and publication. The journals are led by an international team of Editors-in-Chief and Associate Editors who are all active researchers in their fields. Journal of Materials Chemistry A, B & C are separated by the intended application of the material studied. Broadly, applications in energy and sustainability are of interest to Journal of Materials Chemistry A, applications in biology and medicine are of interest to Journal of Materials Chemistry B, and applications in optical, magnetic and electronic devices are of interest to Journal of Materials Chemistry C. More than one Journal of Materials Chemistry journal may be suitable for certain fields and researchers are encouraged to submit their paper to the journal that they feel best fits for their particular article. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors

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