(10)-Oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

文献情報

出版日 2023-10-05
DOI 10.1039/D3CE00831B
インパクトファクター 3.545
著者

Wanli Xu, Yuewen Li, Bin Li, Xiangqian Xiu, Hong Zhao, Zili Xie, Tao Tao, Peng Chen, Bin Liu, Rong Zhang, Youdou Zheng



要旨

In general, β-Ga2O3 films with (01) out-of-orientation have been widely obtained and reported on (0001) sapphire substrates by various growth methods. In this paper, the unusual (10)-oriented β-Ga2O3 films have been epitaxially grown on (0001) sapphire substrates with high crystal-quality under Ga-rich conditions by halide vapor phase epitaxy (HVPE). The out-of-plane epitaxial relationship as (10) β-Ga2O3//(0001) α-Al2O3 has been confirmed by XRD and HRTEM analysis. Under most growth conditions, β-Ga2O3 films exhibit the coexistence of (10) and (01) out-of-plane orientation domains, and increasing the growth temperatures and HCl flow-rates can enhance the growth of (10)-oriented β-Ga2O3. Off-angled (0001) sapphire substrates with off-angles (Δa) toward 〈110〉 have been introduced to control the in-plane domains. It was indicated that the (01)-oriented domains have been gradually eliminated with increasing the off-angles, and pure (10)-oriented β-Ga2O3 films with the best crystal quality reported so far have been obtained while the off-angle was ∼7°. The decrease of the domain boundaries and defects caused by the in-plane rotational domains have led to the improvement of the crystal quality of the as-grown films.

掲載誌

CrystEngComm

CrystEngComm
CiteScore: 5.5
自己引用率: 7.7%
年間論文数: 643

CrystEngComm is the forum for the design and understanding of crystalline materials. We welcome studies on the investigation of molecular behaviour within crystals, control of nucleation and crystal growth, engineering of crystal structures, and construction of crystalline materials with tuneable properties and functions. We publish hypothesis-driven research into… how crystal design affects thermodynamics, phase transitional behaviours, polymorphism, morphology control, solid state reactivity (crystal-crystal solution-crystal, and gas-crystal reactions), optoelectronics, ferroelectric materials, non-linear optics, molecular and bulk magnetism, conductivity and quantum computing, catalysis, absorption and desorption, and mechanical properties. Using Techniques and methods including… Single crystal and powder X-ray, electron, and neutron diffraction, solid-state spectroscopy, spectrometry, and microscopy, modelling and data mining, and empirical, semi-empirical and ab-initio theoretical evaluations. On crystalline and solid-state materials. We particularly welcome work on MOFs, coordination polymers, nanocrystals, host-guest and multi-component molecular materials. We also accept work on peptides and liquid crystals. All papers should involve the use or development of a design or optimisation strategy. Routine structural reports or crystal morphology descriptions, even when combined with an analysis of properties or potential applications, are generally considered to be outside the scope of the journal and are unlikely to be accepted.

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